国家/地区 中国（4）
IPC部 H（4） B（2） G（2）
IPC大类 H01（3） B81（2） G01（2）
IPC小类 H01L（3） B81B（2） B81C（2）
IPC B81B007/02（2） B81C001/00（2） H01L021/60（2）
H01L029/16（2）
发明人 RUHL G（4） DEHE A（2） DEU A（2）
RUHR G（2）
公开年 2015（2）
申请年 2014（3） 
专利权人 RUHL G（4）

Electrical device e.g. photodetector, has multi-layer graphene structure for laterally contacting single-layer graphene part, and graphite part in contact with surface of multi-layer graphene structure.

RUHL G, FOERG R

Hall sensor structure, has carrier layer provided with side part, and seed layer whose part is removed between carrier layer and graphene layer to form graphene structure of graphene layer, where seed layer is formed on side part.

DEHE A, ECKINGER M, KOLB S, RUHL G, DEU A, RUHR G, IKEGINGER M

MEMS acoustic transducer, has dielectric spacer arranged on back plate unit between adjacent conductive perforated back plate portions, and graphene membranes supported by dielectric spacer and extended over perforated back plate portions.

DEHE A, RUHL G, DEU A, RUHR G

Manufacture of sensor component involves forming graphene layer on substrate, depositing plastic material on graphene layer, in order to cover at least partially graphene layer, and separating substrate into two portions.

ELIAN K, RUHL G, THEUSS H, ESCHERPOEPPEL I, LUHEER G, THEUS H, ERIAN C