国家/地区 韩国（3）
IPC部 G（3） H（2）
IPC大类 G03（3） H01（2）
IPC小类 G03F（3） H01L（2）
IPC G03F001/62（2） H01L021/027（2）
发明人 NAM K S（3）
公开年
申请年 2019（2） 
专利权人 S S TECH CO LTD（3）

Pellicle attached to a photomask used in an EUV lithography process for use in preventing cracking and destruction of a thin film, comprises a core layer, and a support layer pattern that supports the pellicle portion from a lower portion.

NAM K S, LEE C, HONG J H, KIM J

Pellicle used for extreme UV-lithography, comprises two-layer film containing graphene, silicon, silicon and silicon nitride, silicon and silicon carbide, silicon and molybdenum silicon, and has preset transmittance, and thickness.

NAM K S, LEE C, HONG J H, YUN J W

Blank mask used for preparing multi-electron beam lithography photomask, has heat-radiating film that is provided on transparent substrate and is composed of carbon compound including graphene or boron carbide, or silicon compound.

NAM K S, SHIN C, LEE J H, YANG C K