国家/地区 美国（6） 韩国（5） 中国（3） 世界知识产权组织（3） 日本（2）
IPC部 B（5） C（5） H（4）
IPC大类 B82（5） C01（5） C23（4）
H01（4） B32（2） H05（2）
IPC小类 B82Y（5） C01B（5） C23C（4）
H01B（4） H01L（3） B32B（2）
IPC C01B031/04（5） B82Y030/00（4） B82Y040/00（4）
C01B031/02（4） C23C016/26（3） C01B032/186（2）
H01B001/04（2） H01B005/14（2）
发明人 AHN J（6）
公开年 2011（3） 2012（2）
申请年 2011（3） 
专利权人 SAMSUNG TECHWIN CO LTD（6）

Graphene sheet used as electrode material, is grown on graphene growth support comprising carbonization catalyst, and comprises ripple(s) formed using difference in thermal expansion coefficient of support and graphene sheet.

AHN J, HONG B, KIM K

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Resistive-type touch panel for electronic device such as mobile phone, has conductive layers that are arranged on surface of substrates, and conductive layers and electrodes made of graphene.

AHN J, BAE S, HONG B, KIM H, LEE Y, AHN J H, HONG B H, SONG Y I, BAE S K, KIM H K, LEE Y B

Manufacturing graphene sheet used as electrode material, involves growing graphene sheet on graphene growth support by applying carbon sources and heat; and forming ripple on the sheet by cooling the graphene growth support and sheet.

AHN J, HONG B, KIM K, AHN J H, HONG B H, KIM K S

Making graphene comprises preparing graphene member comprising e.g. base member, oxide layer and metal catalyst layer, applying water to graphene member, separating metal catalyst layer from oxide layer and removing metal catalyst layer.

AHN J, HONG B, LEE Y, SONG Y, SONG Y I, AHN J H, LEE Y B, HONG B H, LI R