国家/地区 中国（3）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/28（2）
发明人 ZHANG Y（3）
公开年 2013（2）
申请年 2012（3）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Modification method of graphene thin film, involves contacting metal ion solution with graphene thin film, drying graphene thin film and metal substrate, and removing organic layer to obtain modified graphene film.

CHEN Z, WANG B, ZHANG H, ZHANG Y, WU Y, YU G, ZHAO Z

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y

Method for preparing high-k gate medium on surface of multi-layer graphene, involves depositing metal oxide thin film on graphene surface by using atom layer depositing method and adopting metal oxide thin film as high-k gate medium layer.

WANG H, XIE X, YANG X, ZHANG Y