国家/地区 中国（3）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/194（2）
发明人 DI Z（2） JIANG H（2） TIAN Z（2）
XUE Z（2） ZHANG M（2）
公开年 2023（3）
申请年 2023（3）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Transferring graphene involves growing graphene layer on substrate, depositing stress layer on graphene layer, spin-coating bonding glue on stress layer, attaching rigid substrate, peeling rigid substrate followed by performing Vander Waals bonding on laminated structure, and etching stress layer.

TIAN Z, XUE Z, ZHANG M, DI Z, JIANG H

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparing radio frequency transistor with self-aligned structure comprises growing graphene layer on upper surface of substrate, spin coating two photoresist, depositing aluminum and gold form self-aligned structure, spin coating transfer glue, attaching transition substrate and cleaning.

XUE Z, TIAN Z, ZHANG M, DI Z, JIANG H