国家/地区 中国（4）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/28（2）
发明人 WANG H（4）
公开年 2013（3）
申请年 2012（4）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y

Method for preparing high-k gate medium on surface of multi-layer graphene, involves depositing metal oxide thin film on graphene surface by using atom layer depositing method and adopting metal oxide thin film as high-k gate medium layer.

WANG H, XIE X, YANG X, ZHANG Y

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X