国家/地区 中国（5） 世界知识产权组织（2）
IPC部 C（5）
IPC大类 C01（4） C23（3） C30（2）
IPC小类 C01B（4） C23C（3） C30B（2）
IPC C01B031/04（2） C01B032/194（2） C23C016/26（2）
发明人 WANG S（5）
公开年 2012（2） 2020（2）
申请年 2012（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（5）

Reversely transferring graphene comprises e.g. providing graphene grown on metal substrate, spin-coating first colloid on first surface of graphene to form first colloidal graphene-metal substrate structure, and sticking tape on first gel.

CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S

Changing the coupling performance of double-layer graphene comprises combining graphene sample and substrate to form a combined body, heating in a closed container filled with solvent to preset temperature and time and cooling.

CHEN Z, YU G, ZHANG Y, SUI Y, LIANG Y, HU S, LI J, KANG H, WANG S

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y