国家/地区 中国（3）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 WU T（3）
公开年 2020（3）
申请年 2020（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X