国家/地区 中国（5）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L021/768（2）
发明人 ZUO Q（5）
公开年 2014（2） 2015（2）
申请年 2014（4） 
专利权人 SHANGHAI INTEGRATED CIRCUIT RES DEV CE（5）

Graphene interconnection line forming method, involves depositing metal catalytic layer on carbon source layer that is provided with target substrate layer, and forming graphene layer with metal catalytic layer.

KANG X, LI M, ZUO Q

Preparing graphene thin film involves supplying substrate and then applying substrate on surface of carbon source layer in controllable manner to obtain uniform thickness layer.

KANG X, ZENG S, ZUO Q

LED lamp radiating structure, has graphene film connected with receiving substrate by LED chip along horizontal direction, and base plate connected with radiator for dissipating heat and electrically fixed with LED chip.

KANG X, LI M, ZUO Q

Transferring method of graphene thin film comprises preparing initial substrate and graphene thin film, directly attaching graphene thin film on substrate, peeling film, binding, transferring film to substrate, and cleaning adhered film.

KANG X, LI M, ZUO Q

Air gap/graphene interconnection structure, has substrate provided with barrier layer that is fixed on dielectric layer, and upper layer graphite nano-belt lines isolated in dielectric layer through air gap.

LI M, ZENG S, ZUO Q