国家/地区 美国（5） 世界知识产权组织（2）
IPC部 C（3） H（3） B（2）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B031/04（3） H01L021/02（2） H01L029/06（2）
H01L029/66（2）
发明人 DAVIS M A（5）
公开年 2014（4）
申请年 2013（5）
专利权人 SOLAN LLC（5）

Graphite based device, useful e.g. in solar cells, comprises substrate comprising set of zones, graphene stacks, and feature formed in the first zone, where first graphene stack is formed in first zone comprising nonplanar graphene layer.

DAVIS M A

Graphite-based device useful in e.g. electronic device, solar cells comprises a substrate comprising zones, and graphene stacks which are formed in zones and comprises non-planar graphene layers having bending angle or curvature.

DAVIS M A

Method for forming graphite-based device on substrate used in manufacture of e.g. solar cell, involves generating several graphene stacks in doped zones which are formed by doping substrate with carbon.

DAVIS M A

Graphite-based device used in e.g. solar cells comprises substrate comprising zones, where first zone in zones comprises surfaces and first surface is adjacent to second surface in surfaces, and graphene stack having first graphene stack.

DAVIS M A

Forming a graphite-based structure e.g. diode, transistor or LED on a substrate e.g. glass, comprises patterning a substrate to form elements on substrate, and concurrently generating a first graphene layer and a second graphene layer.

DAVIS M A