国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L023/532（2）
发明人
公开年
申请年 2014（3）
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（3）

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S

Semiconductor device for e.g. personal computer, has conductive feature, insulating material layer and barrier layer containing hydrocarbon, halocarbon, sulfured carbon, silicon carbon, graphite, graphene, carbon and/or fullerene.

CHIEN Y C, LEE Y, LEUNG M, YANG C

Construction method of interconnect structure for semiconductor structure involves forming first graphene layer within first trench and adjacent first metal layer that is formed within first trench and adjacent barrier layer.

WANN C H, KO T