国家/地区 美国（3） 中国（2）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/44（2） H01L021/768（2） H01L023/532（2）
发明人
公开年 2014（3）
申请年 2013（2） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（3）

Construction method of interconnect structure for semiconductor structure involves forming first graphene layer within first trench and adjacent first metal layer that is formed within first trench and adjacent barrier layer.

WANN C H, KO T

Making semiconductor device used in e.g. cell phone, by forming graphene-based conductive layer over surface of conductive feature within opening in insulating material, and forming carbon-based adhesive layer over sidewalls of opening.

YANG S, LEE M H, LEE H, WU H, LI M, LI X, WU X, LEE M, YANG S Y, LEE H H, WU H C

Transferring sheet of graphene to metal contact bump comprises placing sheet on substrate comprising metal contact bump, aligning imprinter device, lowering the device, pushing down and lifting up the device and removing sheet portions.

HU Y, LIU C, LIU Z, HU Y H, LIU C S