国家/地区 美国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/285（2） H01L023/522（2） H01L023/532（2）
发明人
公开年 2015（4）
申请年 2015（2） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（4）

Method for manufacturing graphene for integrated circuits to be formed from variety of active and passive devices, involves forming contacts to graphene layer on device substrate, where contacts are on opposite sides of gate electrode.

DAL MARK V

Semiconductor device for use in e.g. personal computer, has carbon-based adhesive layer arranged over sidewalls, and carbon nano-tube arranged within insulating material over graphene-based conductive layer and carbon-based adhesive layer.

YANG S, LEE M, LEE H, WU H

Solar cell device has back contact that is provided with back electrode layer and graphene layer, absorber that is provided over back contact, and front contact that is provided over absorber.

TSAI C, CHENG T, CHENG Z, CAI J

Semiconductor device for e.g. personal computer, has conductive feature, insulating material layer and barrier layer containing hydrocarbon, halocarbon, sulfured carbon, silicon carbon, graphite, graphene, carbon and/or fullerene.

CHIEN Y C, LEE Y, LEUNG M, YANG C