国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/768（2） H01L023/522（2） H01L023/528（2）
H01L023/532（2）
发明人 LEE M（2） SHUE S（2） YANG S（2）
公开年 2020（3）
申请年 2019（3） 
专利权人 TAIWAN SEMICONDUCTOR MFG CO LTD（3）

Method for forming graphene layer, involves performing carbon dissolution process to cause graphene layer to form between seed layer and underlying conductive feature, and filling remainder of trench with conductive material.

YANG S, LEE M, SHUE S, LI M, SUI X

Semiconductor structure has metal line that is located over via and in contact with first graphene layer and second graphene layer peripherally enclosing metal line and first graphene layer which extends along top surface of via.

YANG S, LEE M, SHUE S

Device used for producing graphene films, comprises a graphene layer provided over a concave or convex region of a substrate and planar region of the substrate, concave or convex region and the planar region provided adjacent to each other.

CHEN M, PAN S C, HSIEH C