国家/地区 中国（8）
IPC部 F（6）
IPC大类 F25（4） F24（3）
IPC小类 F25B（4） F24H（2）
IPC F25B021/02（4） F24H001/10（2）
发明人 TANG Y（8） YU H（8） YU J（4）
MA D（3） ZHANG M（3） HUANG J（2）
LIU W（2） SUN Y（2） TIAN Z（2）
ZHU K（2）
公开年 2016（8）
申请年 2015（7） 
专利权人 TANG Y（8）

Energy transfer component, has middle heat insulation layer formed between outer graphene layer and inner graphene layer, where heat transferring connecting mechanism is fixed between inner graphene layer and outer graphene layer.

TANG Y, YU H, ZHANG M, MA D, YU J

Semiconductor heating plate, has main body provided with heat radiator and cold side heat, metal conductor electrically connected with power supply, and N type semiconductor and P type semiconductor fixed with uniform graphene.

MA D, SUN Y, TANG Y, YU H, ZHANG M

Open cooling device, has table whose lower part is connected with refrigerating sheet that is connected with power supply, and uniform graphene layer formed between N-type semiconductor and P-type semiconductor.

SUN Y, TANG Y, YU H, YU J, ZHU K

Semiconductor water heater has P type semiconductor in which semiconductor heating plate is set with graphene, and N type semiconductor and P type semiconductor that are uniformly arranged on graphene.

HUANG J, MA D, TANG Y, YU H, YU J

Semiconductor heating device, has semiconductor heating element provided with semiconductor heating plate and connected with hot end, and N-type semiconductor and P-type semiconductor made of graphene.

HUANG J, LIU W, TANG Y, TIAN Z, YU H

Refrigeration device has P type semiconductor that is set with graphene layer or N-type semiconductor and P type semiconductor which is set with uniform graphene.

TANG Y, TIAN Z, WANG Y, YU H, ZHU K

CPU heat radiating device has heat guide element which is provided with N-type semiconductor which is set with graphene, P-type semiconductor and semiconductor refrigerating sheet, which are set with uniform graphene.

LIU W, TANG Y, YU H, YU J, ZHANG M

Semiconductor refrigerator and water heater integrating device, has semiconductor heating plate hot end formed with heating cavity, and graphene layer arranged between N-type semiconductor and P-type semiconductor.

TANG Y, YU H