国家/地区 日本（3） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人 MATSUMOTO T（3）
公开年 2014（3）
申请年 2014（3）
专利权人 TOKYO ELECTRON LTD（3）

Production of graphene for wiring film of three-dimensional stacked memory, involves decomposing carbon-containing gas with low reactivity in space which opposes substrate, and decomposing carbon-containing gas with high reactivity.

KAGAYA M, MATSUMOTO T, NISHIDE D

Manufacture of graphene e.g. carbon nanotube used for manufacturing semiconductor device, involves supplying carbon-containing gas to catalyst metal layer, heating catalyst metal layer by irradiating laser-beam and cooling.

MATSUMOTO T, IZAWA Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y