国家/地区 美国（2）
IPC部 C（3）
IPC大类 C23（3） C01（2）
IPC小类 C23C（3） C01B（2）
IPC C23C016/26（3） C01B032/186（2）
发明人 IFUKU R（3） MATSUMOTO T（3）
公开年 2018（2）
申请年 2017（3）
专利权人 TOKYO ELECTRON LTD（3）

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Formation of two-dimensional material e.g. graphene, involves forming amorphous film on substrate, modifying surface of amorphous film, and supplying raw material of two-dimensional material onto modified amorphous film.

IFUKU R, MATSUMOTO T

Forming method for base film of graphene involves heating substrate to temperature at which impurities included in formed metal film are eliminated as gas and to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R