国家/地区 美国（3） 日本（2） 韩国（2）
IPC部 H（3） B（2） C（2）
IPC大类 H01（3） B01（2）
IPC小类 H01L（3） B01J（2）
IPC H01L021/768（3） H01L023/532（3） B01J023/755（2）
发明人 KASHIWAGI Y（3）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（3）

Method for processing substrate of MOSFET during manufacturing of integrated circuit, involves providing planarized substrate, followed by selectively depositing silicon dioxide film on first material and removing graphene layer.

TAPILY K N, MATSUMOTO T, KASHIWAGI Y, LEUSINK G J

Patterning component designed to contact with substrate having graphene oxide film used in wirings of damascene structure of semiconductor device, consists of metal layer with pattern formed on patterning component.

MATSUMOTO T, KASHIWAGI Y

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y