国家/地区 日本（3） 世界知识产权组织（2）
IPC部 C（3） H（2）
IPC大类 C23（3） C01（2） H01（2）
IPC小类 C23C（3） C01B（2） H01L（2）
IPC C23C016/26（3） C01B032/186（2） C23C016/50（2）
发明人 YAMADA H（3）
公开年 2022（2）
申请年 2022（3） 
专利权人 TOKYO ELECTRON LTD（3）

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M