国家/地区 日本（3） 韩国（3） 美国（3） 台湾（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B01（3） C01（3） C23（2）
H01（2）
IPC小类 B01J（3）
IPC C01B031/02（3）
发明人 MATSUMOTO T（3） MATSUMOTO TAKASHI（2）
公开年 2013（2）
申请年
专利权人 TOKYO ELECTRON LTD（3）

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Processing of graphene used for manufacture of graphene nanoribbons, involves irradiating ion beam to graphene using gas cluster ion beam apparatus, forming cluster and etching.

MATSUMOTO TAKASHI, MATSUMOTO T

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T