国家/地区 中国（4）
IPC部 H（2）
IPC大类 H01（2）
IPC小类 H01S（2）
IPC
发明人 FANG X（4）
公开年 2017（2）
申请年 2017（2） 
专利权人 UNIV CHANGCHUN SCI TECHNOLOGY（4）

Vertical cavity surface emitting semiconductor laser electrode, has graphene film layer and lead-out metal wire connected with each other, and semiconductor laser electrode body connected with film layer that is connected with laser chip.

WEI Z, TANG J, FANG X, WANG X, CHU X, WANG D, WANG F, FENG Y, ZHANG J

Heat sink for semiconductor laser, has graphene film layer that is coated with copper heat sink formed graphene and that is prepared on copper heat sink surface of copper heat sink.

TANG J, WEI Z, FANG X, FANG D, WANG D, WANG F, FENG Y, LI J, CHU X, WANG X

Preparation of light catalytic material based on energy band modulation of double quantum dot sensitized graphene/oxide composite structure, involves migrating graphene to substrate material surface of deposited metal quantum dots.

FANG X, CHEN X, FANG F, LI J, WANG X, WEI Z, CHU X, MIAO Y, LI R

Preparing graphene material using laser heating device, comprises e.g. annealing nickel film plated on substrate placed on quartz tube and regulating laser optical path and parameters on laser, injecting argon and hydrogen and heating.

FANG F, FANG X, HAN Z, LI J, TAN X, WANG F, WANG X, WANG Y, WEI Z, CHEN F, FANG D, GAO X, CHU X, NIU S, TANG J