国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3） C01（2）
IPC小类 C01B（2） H01S（2）
IPC
发明人 WANG F（4）
公开年 2017（2）
申请年 2017（2） 
专利权人 UNIV CHANGCHUN SCI TECHNOLOGY（4）

Storage composite material comprises cobalt-copper-silicon composite with nitrogen and sulfur co-doped graphene.

LIU W, FAN W, SUN Y, LIU D, ZHAO J, LIU H, CHEN P, WANG Q, WANG X, WANG F

Vertical cavity surface emitting semiconductor laser electrode, has graphene film layer and lead-out metal wire connected with each other, and semiconductor laser electrode body connected with film layer that is connected with laser chip.

WEI Z, TANG J, FANG X, WANG X, CHU X, WANG D, WANG F, FENG Y, ZHANG J

Heat sink for semiconductor laser, has graphene film layer that is coated with copper heat sink formed graphene and that is prepared on copper heat sink surface of copper heat sink.

TANG J, WEI Z, FANG X, FANG D, WANG D, WANG F, FENG Y, LI J, CHU X, WANG X

Preparing graphene material using laser heating device, comprises e.g. annealing nickel film plated on substrate placed on quartz tube and regulating laser optical path and parameters on laser, injecting argon and hydrogen and heating.

FANG F, FANG X, HAN Z, LI J, TAN X, WANG F, WANG X, WANG Y, WEI Z, CHEN F, FANG D, GAO X, CHU X, NIU S, TANG J