国家/地区 中国（5）
IPC部 H（3） B（2）
IPC大类 H01（3）
IPC小类 H01G（2）
IPC H01G011/86（2）
发明人 YU S（2） ZHU Y（2）
公开年 2018（5）
申请年 2018（5）
专利权人 UNIV CHINA SCI TECHNOLOGY（5）

Preparation of graphene transistor circuit device involves providing boron nitride/graphene/boron nitride heterojunction on metal substrate, forming mask on heterojunction, and performing electron beam exposure and metal evaporation.

GUO G, YANG H, LI H, CAO G

Electrically conductive porous material, has graphene coated on surface of porous material main body, and catalyst for thermally catalyzing degradation of formaldehyde supported in porous material main body.

YU S, HUANG J, GE J

High performance printing ink in flexible electrode for flexible all-solid-state supercapacitor, is composed of carbon quantum dots, graphene oxide, surfactant and solvent, and is prepared by adding carbon quantum dots.

ZHU Y, LIU J

Preparing graphene sandwich gold nanoparticle nanosheet comprises e.g. forming graphene oxide film on the substrate, modifying the surface of the graphene oxide film with a modifier to obtain a positively charged graphene oxide film.

YU S, ZHU H

Graphene film electrode, comprises electrode substrate, graphene film composited on electrode substrate, metal thin film composited on graphene film, where graphene film is composed of single layer of graphene sheets.

ZHU Y, YE J