国家/地区 中国（12）
IPC部 H（9） C（4） G（2）
IPC大类 H01（8） C01（2） C09（2）
IPC小类 H01L（5） C01B（2） C09K（2）
H01M（2）
IPC H01L029/24（3） H01L021/34（2） H01L027/11521（2）
H01L029/06（2） H01L031/113（2） H01L031/18（2）
发明人 ZHANG W（4） CHEN L（3） SUN Q（3）
DENG J（2） LI X（2） WAN J（2）
ZHU B（2）
公开年 2021（7） 2020（6）
申请年 2020（13）
专利权人 UNIV FUDAN（13）

Laminated lithium metal battery negative electrode material for use in lithium metal secondary battery, has artificial lithium ion diffusion layer that is prepared on surface of lithium-philic metal layer.

XIA H, YUE X, WANG D, FU Z

Electrochemically preparing low-structure defect graphene comprises mixing aqueous electrolyte solution with liquid alkane, inserting anode and cathode and energizing to obtain graphene slurry.

SHI M, ZHANG X, ZHOU X, LIU Q, LI F, LI X, XU C

Double photoelectric grid structure based semiconductor wavelength detector, has upper and lower gates that utilizes thin film material and material of substrate to form coupling structure in which two photogates control channel together.

WAN J, DENG J

Two-dimensional/zero-dimensional mixed structure artificial heterogeneous synaptic device, has tunneling layer formed on rear gate electrode, and charge trapping layer with charge trapping function formed on tunneling layer.

CHEN L, MENG J, WANG T, SUN Q, ZHANG W

Wide temperature range electrolyte for lithium-carbon fluoride batteries, comprises methyl butyrate and propylene carbonate are used as mixed solvent, lithium salt is used as solute, coating material includes nanocarbon disks.

DONG X, XIA Y, FANG Z

New accordion-shaped cerium oxide/reduced graphene oxide composite material useful as microwave absorbent.

CHE R, LI Q, ZHANG J, LI X

Method for preparing flexible transparent conductive film, involves peeling from rigid substrate to obtain transparent conductive film with pattern of mask hollow area and transparent conductive film with pattern of mask covering area.

WANG K, JIN Y, XIAO F

Semi-floating gate memory comprises substrate, gate comprising graphene, metal contact electrode, barrier layer, Semi-floating gate, two-dimensional material and tunneling layer, channel layer, and source level and drain level.

ZHU B, CHEN L, SUN Q, ZHANG W

Graphene/metal organic framework composite structure prepared by e.g. using chemical vapor deposition method at high temperature, transferring the single-layer graphene on copper foil, and epitaxially growing metal organic framework.

SUN Z, DENG H, WU J

Two-dimensional material based NS laminated transistor, has two-dimensional materials placed on active layer, and graphene or metal layer for determining gate stack common gate composition.

BAO W, ZONG L, WAN J, DENG J, GUO X, ZHANG W