国家/地区 美国（3）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（2）
IPC
发明人 COLOMBO L（2） RUOFF R S（2）
公开年 2010（3）
申请年 2010（2） 
专利权人 UNIV TEXAS SYSTEM（3）

Synthesis of graphene involves implanting carbon in metal substrate via ion implantation, annealing with implanted carbon, cooling, transferring with graphene layer into dielectric layer, and removing metal substrate.

COLOMBO L, WALLACE R M, RUOFF R S

Semiconductor device comprises a dielectric layer on silicon base layer, graphene layer, and one of a metal and semiconductor layer which acts as a nucleation layer for the graphene layer.

BANERJEE S, COLOMBO L, KIM S, TUTUC E

Graphite/graphene composition, e.g. for use in paints, inks, and ultracapacitors comprises homogeneous suspension of graphite and/or graphene materials in liquid comprising organic solvent and water.

PARK S, RUOFF R S