国家/地区 中国（4）
IPC部 C（3）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 LEI J（2） LEI T（2） TANG X（2）
WANG D（2） WANG H（2） WANG Y（2）
ZHANG Y（2）
公开年 2012（3）
申请年 2011（4）
专利权人 UNIV XIDIAN（4）

Preparation of graphene involves adding graphite powder to nonaqueous polar solvent, mixing uniformly, obtaining mixed solution, washing, centrifuging and filtering.

LING Y, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z

Method for growing wafer-level epitaxial graphene on silicon carbide surface involves placing cleaned carbon source in furnace cavity filled with hydrogen, heating, removing oxides on substrate and processing in furnace filled with argon.

LEI J, LEI T, TANG X, WANG D, WANG H, WANG Y, ZHANG Y

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Graphene based nano-electromechanical resonator preparation method, involves coating protective glue on surface of sample, corroding part of insulation substrate on lower part of graphene film layer, and corroding protective glue.

FAN K, JI X, NIU X, WANG W