国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（3） C08（3）
IPC小类 C01B（3） C08J（2） C08K（2）
C08L（2）
IPC C01B032/184（2） C08J009/40（2） C08K003/04（2）
C08L061/28（2）
发明人 ZHANG C（7）
公开年 2020（2） 2021（2）
申请年 2020（3）  2015（2） 
专利权人 UNIV ZHEJIANG（7）

New 2,2,6,6-tetramethylpiperidin-1-olate based aqueous anode polymer useful as anode battery material in small molecular liquid flow battery system.

ZHANG C, CHEN L, WANG H, XU J, NIE J, FU H, DU B

Preparing precise patterned three-dimensional porous graphene and precise transfer method used in strain sensing involves preparing polydimethylsiloxane substrate, spin-coating phenolic resin polymer solution and casting layer of Ecoflex silica precursor polymer on surface of laser-induced graphene.

PING J, ZHANG C, YING Y

Method for rapidly preparing graphene fiber aerogel comprises performing blow spinning on graphene oxide-sodium polyacrylate mixed solution and spraying gel fiber to obtain dried and shaped graphene oxide fiber aerogel.

GAO C, ZHANG C, XU Z, LIU S

Preparing graphene-based melamine foam by dispersing graphite and stripping agent in solvent, ultrasonically treating and centrifuging, and taking supernatant to obtain graphene dispersion, immersing melamine foam and squeezing.

ZHANG C, ZHANG L, FENG L, GU X

Preparing low thermal conductivity hydrophobic melamine foam by impregnating melamine foam in graphene oxide solution, repeatedly extruding, leaving still, taking out melamine foam and performing thermal reduction after vacuum drying.

ZHANG C, ZHANG L, FENG L, GU X

Chemical vapor deposition based preparation method of silicon doped graphene material used in e.g. optoelectronic technology field, involves heating treated substrate and carrying out reaction in presence of carbon source gas.

LIN S, LI X, XU W, ZHANG C

Preparing silicon doped graphene useful in micro-nano device, comprises placing graphene in a furnace tube, evacuating, passing protective gas through the inner furnace tube and heating, passing silane, reacting and cooling.

CHEN H, LIN S, LI X, XU W, XU Z, WANG P, WU Z, ZHANG C, ZHONG H