国家/地区 美国（5）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（3）
IPC H01L029/16（2）
发明人 FRIEDMAN A L（2） GARMIRE D（2） JONKER B T（2）
KAMIN N（2） VAN T ERVE O M T（2）
公开年 2015（5）
申请年 2015（3） 
专利权人 US SEC OF NAVY（5）

Processing method for making graphene spin filter device by chemical vapor deposition (CVD) involves growing graphene film on first crystalline ferromagnetic metal surface and then depositing second ferromagnetic film on graphene film.

COBAS E, FRIEDMAN A L, JONKER B T, VAN T ERVE O M T

Method for making homoepitaxial tunnel barrier transport device, involves fluorinating graphene film, and performing fluorination to fluorinate device to form tunnel barrier transport device with functionalized graphene-on-graphene.

FRIEDMAN A L, JONKER B T, LI C H, ROBINSON J T, VAN T ERVE O M T, VAN T ERVE O M T

Ring cavity laser device for producing light at predetermined gain bandwidth, has graphene saturable absorber that is disposed at least partially between reflective surfaces of second and third mirrors.

KUB F J, CURRIE M

Capacitive-based graphene sensor system, has dielectric layer that is arranged over electrodes from which graphene layer is electrically isolated.

KAMIN N, DE ANDRADE M, GARMIRE D, ORDONEZ R, HAYASHI C

Transistor e.g. FET, for use as graphene-based quantum detector device, has gate including graphene sheet formed with decreasing taper width from maximum width distal to discharging element to minimum width proximate to element.

DE ANDRADE M C, LEESE D E A M, GARMIRE D, KAMIN N