国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 YANG H（3）
公开年
申请年
专利权人 YANG H（3）

Method for fabricating graphene electronic device i.e. FET, of radio frequency device, involves exposing graphene layer in channel formation region by wet etching metal protection layer and metal layer using photoresist pattern.

HEO J, CHUNG H, SEO S, LEE S, YANG H

Method for depositing layer onto workpiece e.g. graphene using plasma, involves orientating workpiece with respect to source material to prevent direct propagation of ejected atoms from source material to work surface of workpiece.

QIU X, YANG H, SHIN Y J

Manufacture of electronic device e.g. light emitting device, involves coating polymer solution with distributed nanoparticles on substrate, drying, attaching obtained polymer thin film and graphene thin film and forming top electrode.

KIM T, PARK W, SON D, YANG H, LEE J, JUNG J, KIM T W, JUNG J H, SON D I, LEE J M, YANG H Y, PARK W I