国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L031/18（2）
发明人 ZHOU S（3）
公开年
申请年 2019（2） 
专利权人 YANGZHOU POLYTECHNIC INST（3）

Stacked silicon quantum dot heterojunction solar cell, comprises aluminum electrode layer vapor-deposited on n-type silicon substrate surface and graphene layer provided on p-type laminated film surface.

SHAN D, ZHOU S, TANG M, YANG R, CAO Y, QIAN S, QIU S, CHEN X

Flat film solar cell comprises aluminum electrode, phosphorus-doped amorphous silicon thin film, silicon carbide thin film interface layer, boron-doped nano silicon film forming nano resonant cavity, graphene layer, and gold electrode.

SHAN D, ZHOU S, TANG M, YANG R, CAO Y, QIAN S, CHEN X

Graphene/silicon structure solar cell manufacturing method, involves locating bottom electrode on lower surface of n-type silicon layer, and introducing oxide layer at Schottky junction interface to modify Schottky junction interface.

SHAN D, ZHOU S, CHEN X