国家/地区 韩国（3） 美国（3）
IPC部 H（4） B（3） C（2）
IPC大类 H01（4） B82（2） C23（2）
IPC小类 H01L（3） B82Y（2） C23C（2）
IPC H01L021/02（3） H01L029/16（3） B82Y030/00（2）
H01L029/778（2） H01L029/786（2）
发明人 AHN J（4）
公开年 2014（4）
申请年 2013（2） 
专利权人 SAMSUNG ELEC.（3） UNIV SUNGKYU.（3） AHN J（2）

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Graphene-layered structure, useful in solar cells, transistor and in transparent electrode, comprises ion implantation layer in silicon carbide thin film, and graphenized silicon carbide surface layer on the ion implantation layer.

SHIN H, CHOI J, AHN J, SEO J

Metallic conductor e.g. flat board conductor, for use in flexible flat cable that is utilized in wide-ranging industry field, has main body whose surface is coated with graphene layer, where graphene layer is adhered with catalytic layer.

AHN J, KO Y H

Graphene semiconductor, useful in electrical device e.g. FET, single electron transistor and LED, comprises graphene and a metal atomic layer comprising a metal i.e. sodium disposed on graphene which transfers charge with the graphene.

AHN J, SEO J, PARK J, JEON C, AHN J R, JEON C H, PARK J H, SEO J T