国家/地区 台湾（3）
IPC部 H（3） B（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/336（3） H01L029/16（3） H01L029/78（3）
H01L021/04（2） H01L021/28（2） H01L029/778（2）
H01L029/786（2）
发明人 AVOURIS P（3）
公开年 2012（2）
申请年 2011（2） 
专利权人 INT BUSINESS.（3）

Semiconductor structure of semiconductor device e.g. MOSFET used in electronic device e.g. personal computer, has nitride layer which is formed on graphene layer between source electrode and drain electrode.

AVOURIS P, NEUMAYER D, ZHU W, NEUMAYER D A

Graphene-based field effect transistor for high-frequency electronics, comprises graphene layer located on insulating layer, first and second metal portions, first and second electrodes, gate dielectric layer, and dielectric seed layer.

AVOURIS P, FARMER D B, LIN Y, ZHU Y, LIN Y M

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L