国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L031/18（3） H01L031/109（2）
发明人 CAI B（3）
公开年 2020（3）
申请年 2020（3）
专利权人 SHANGHAI NAT.（3）

Construction of high-sensitivity near infrared photoelectric detector involves preparing gallium arsenide film or gallium arsenide wafer, placing graphene/gallium arsenide sample, annealing, and fabricating electrode on processed samples.

CUI D, CAI B, WANG D, JIN C

Construction method of highly sensitive position detector based on graphene/germanium composite film, involves fabricating electrodes on sample to obtain highly sensitive position detector based on graphene/germanium composite film.

CUI D, CAI B, WANG D, JIN C

Method for constructing a near-infrared self-driving photodetector based on semiconductor nanowires or graphene, involves designing a geometrically asymmetric semiconductor nanowire composite structure.

CUI D, CAI B, LU J, JIN C