国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/02（3）
发明人 CAO B（4）
公开年 2017（4）
申请年 2016（2）  2017（2） 
专利权人 UNIV SOOCHOW（3）

Composite substrate/three-group nitride micron column structure, has composite substrate formed with growing graphene insertion layer that is covered on dielectric material, and nitride micron column layer inserted in growing group.

QIU Z, LU W, ZHAO E, XI L, LI Z, YANG S, CAO B, WANG Q

Nitride semiconductor surface modification method by putting nitride semiconductor substrate into plasma generator, heating, raising the temperature, and growing vertical structure graphene on nitride semiconductor.

CAO B, LI Z, ZHAO E, YANG S, LIU Y, WU Z, WANG Q

Method for preparing graphene/dielectric material, involves utilizing ion beam sputtering or electron beam evaporation, plating dielectric material substrate surface with nickel layer and dispersing graphite powder in ethanol.

CAO B, ZHAO E, XI L, LI Z, YANG S, WANG Q

Preparation of graphene-supported spherical inorganic fullerene molybdenum disulfide composite material by forming composite material, and performing liquid-phase pulse laser irradiation by e.g. reducing graphene oxide.

LUO T, CAO B, WANG P, YANG S