国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01M（2）
IPC H01M004/62（2）
发明人 CHEN X（4）
公开年 2010（3）
申请年 2009（4）
专利权人 CHINESE ACAD.（2）

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q

Electrode used for lithium ion secondary battery, is positive electrode or negative electrode containing preset amount of graphene as conductive additive.

LV W, CHEN X, HE Y, YANG Q, YOU C

Conducting material used in lithium-ion battery, comprises black graphene powder and has high electric conductivity and excellent stability.

SONG H, CHEN X, GUO P