国家/地区 韩国（6）
IPC部 H（5） C（4） B（2）
IPC大类 H01（5） C01（4）
IPC小类 C01B（4） H01L（3）
IPC H01L029/16（2） H01L029/78（2） H01L029/786（2）
发明人 CHO B（6）
公开年
申请年 2021（2） 
专利权人 KOREA ADVANC.（3） KOREA INST S.（2）

Heat dissipation sheet useful for display component comprises heat dissipation layer formed of polymer sheet containing graphene particles, and first adhesive layer located on top of heat dissipation layer.

YOO T H, LEE J, JOH B J, PARK M W, PARK M, CHO B, LIU T

Material used in composition for forming layer of anode used for all-solid secondary batteries, comprises metal-carbon composite containing carbon material and metal particles which are uniformly dispersed in carbon material.

KIM J, YANG J, CHO B, JUNG Y, KIM Y, HAN S, KIM J K, YANG J H, JUNG Y C, KIM Y C, HAN S I, HOON Y, CHO B K, CHAE C, HAN X, JIN R, ZHENG Y, ZHAO B, KIM Q

Nano porous three dimensional graphene for preparing gas separating membrane used in supercapacitor, is prepared heating metal oxide solution and reacting with ion exchanged water.

HAHM M G, CHO B, KIM D H, PARK S G, NAM K S

Manufacture of n-doped graphene used for manufacturing electrical components, involves exposing graphene to ammonium fluoride, leading to formation of fluorine layer on portion of surface of graphene layers.

BONG J H, CHO B J, SUL O, YOON H A, ALEXANDER Y H, SUL W J, CAO B, FENG Z, XUE W, CHO B, BONG J

Manufacture of graphene for top-gate FETs, involves forming graphene layer on base substrate, attaching target substrate onto layer, and separating graphene layer from base substrate to transfer graphene layer onto target substrate.

CHO B, KIM T, SHIN W, YOON T, BYUNG J C, TAE S Y, TAEK S K, WOO C S

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W