国家/地区 韩国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/02（2） H01L051/00（2）
发明人 CHO B J（3）
公开年 2018（3）
申请年 2017（3）
专利权人 KOREA ADVANC.（3）

Manufacturing method for graphene-silicone fusion electric circuit element, involves forming passivation oxide layer on upper portion of silicon transistor, and through-hole passing through the passivation oxide layer is formed.

CHO B J, HONG S K, KIM C S

Method of manufacturing graphene element e.g. FET, involves forming insulating film on portion of metal layer formed on upper portion of graphene exposed and forming another metal layer in portion of upper portion of insulating film.

CHO B J, SONG S M, BONG J H

Manufacturing method of graphene nanoribbon used for producing up gate-type FET, involves forming reaction inhibiting layer on graphitized metal catalyst thin film, and arranging carbon source to grow graphene nanoribbons.

CHO B J, HWANG W S, HONG S K, BONG J H