国家/地区 韩国（3） 美国（3）
IPC部 B（2） H（2）
IPC大类 H01（2）
IPC小类
IPC
发明人 CHUNG K H（3）
公开年 2014（3）
申请年 2013（3）
专利权人 ELECTRONICS .（3） CHOI C G（2） CHOI J S（2） CHUNG K H（2）
KIM J T（2） YOUN D H（2） YU Y（2）

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Forming graphene pattern, comprises forming fine pattern defined by trench on substrate, providing graphene solution on fine pattern, and selectively forming graphene layer on fine pattern contacting graphene solution.

CHUNG K H, KIM J T, YU Y, CHOI J S, YOUN D H, KIM K, CHOI C G, YU Y J, KIM K C

LED device has first and second electrode portions connected to first and second semiconductor layers, respectively and that each includes first metal layer, graphene layer, and second metal layer sequentially provided on substrate.

YOUN D H, CHOI C G, CHUNG K H