国家/地区 中国（4）
IPC部 G（2） H（2）
IPC大类 G01（2） H01（2）
IPC小类 G01N（2）
IPC G01N021/35（2）
发明人 DAI Q（4）
公开年 2016（4）
申请年 2015（4） 
专利权人 NAT CENT NAN.（4）

Graphene thin film electron source for use in vacuum electronic device, has first electrode formed with substrate, second electrode formed with electrode film, and semiconductor layer formed with insulation layer.

BAI B, DAI Q, LI Z, LI C

Method for detecting in-situ electrical graphene background deduction, involves producing plasmon enhancement components and infrared detection device, overlying graphene layer on dielectric layer, followed by determining.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R

Graphene plasmon device used for enhancing infrared spectrum detection, comprises gate electrode, dielectric layer made of e.g. sodium chloride, graphene layer, source electrode, drain electrode metal layer and to-be-detected material.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R

Graphene plasmon enhanced infrared spectrum detection based spectral line peak value separating method involves detecting need for determining preset range and increasing gate voltage so that intrinsic signal in masked peak is revealed.

BAI B, DAI Q, HU D, HU H, YANG X, LIU R