国家/地区 中国（8）
IPC部 H（4） C（3）
IPC大类 H01（4） C08（2） C09（2）
IPC小类 H01M（3） C08G（2） C09D（2）
IPC C08G018/48（2） C08G018/66（2） C08G018/67（2）
C09D005/24（2） C09D007/12（2） H01M004/1397（2）
H01M004/58（2） H01M004/62（2）
发明人 DAI Y（8）
公开年 2014（8）
申请年 2014（7） 
专利权人 UNIV SOUTHEA.（3） UNIV JIANGSU（2）

Tobacco shred additive, is obtained by dispersing graphene oxide in water ultrasonically to obtain homogeneous solution.

DAI Y, LIANG K, TAN L, YAN L, ZHU L, CHEN K, HAN D

Phosphate-graphene foam anode material preparation method, involves preparing graphene hydro-gel sheet with pyrene derivative solution and making graphene sheet self-assembly by using hydro-thermal process to obtain graphene hydro-gel.

JIANG W, LEI L, QI Q, YIN G, DAI Y, FAN Q, SUN Y, WANG Y, ZHENG Y

Graphene-based sponge selenium/sulfur carbon electrode is useful in cell, preferably lithium selenium/lithium sulfur cell, constructed by placing selenium/sulfur carbon electrode on graphene-based sponge.

JIANG W, LEI L, QI Q, YIN G, DAI Y, FAN Q, SUN Y, WANG Y, ZHENG Y

Graphene-carbon nano-tube composite structure construction phosphate based flexible lithium ion secondary battery anode preparation method, involves filtering and drying carbon nano-tube and composite anode material to obtain product.

YIN G, JIANG W, LEI L, QI Q, ZHENG Y, DAI Y, FAN Q, SUN Y, WANG Y

Preparation of graphene oxide-based UV-curable anti-electromagnetic shielding coating material for e.g. fine circuit connection involves formulating graphene oxide solution using Hummers process and dissolving in N,N'-dimethylformamide.

YANG D, XU J, DAI Y, QIU F, RONG X

Preparation of oxidized graphite alkene UV curable antielectromagnetic shielding coating material by dissolving graphene oxide solution in N,N-dimethylformamide.

YANG D, XU J, DAI Y, QIU F, RONG X

Gallium nitride crystals preparation involves preparing graphene nanosheet and dispersing nanosheet in solution of N,N-dimethylformamide or N-methyl pyrrolidone to obtain oxidized graphene nanosheet, which is later dispersed in water.

TIAN Y, WU Y, LI X, ZHANG L, DAI Y, SHAO Y, HAO X, HUO Q

Channel width controlled large area graphene nanometer belt Fin-FET device, has transfer graphene-containing layer formed on source/drain electrode of substrate, where part of graphene-containing layer is located on medium layer of gate.

SUN Q, WANG P, ZHOU P, ZHANG W, DAI Y