国家/地区 中国（4）
IPC部 C（2） H（2）
IPC大类 H01（2）
IPC小类 H01L（2）
IPC H01L021/02（2）
发明人 DENG B（4）
公开年 2019（2）
申请年 2019（3） 
专利权人 BEIJING GRAPHENE INST（4）

Vertical furnace for preparing graphene, comprises furnace body, where furnace body is cylinder with one end opening, and cylinder comprises cylinder part and two ends of cylinder part are respectively set on top end part and bottom end part.

PENG H, LIU Z, YAN R, DENG B, DU Y

Method for transferring graphene wafer, involves forming graphene wafer on sapphire-metal substrate and peeling graphene wafer from metal substrate by performing electrochemical bubbling.

PENG H, LIU Z, YAN R, DENG B, TANG J, DU Y, CAI A

Preparing multilayer graphene involves providing copper foil, bonding copper foil to substrate, annealing copper foil after bonding substrate, surface of annealed copper foil is subjected to chemical vapor deposition to grow graphene.

PENG H, WANG Y, DENG B, LIU Z

Method for preparing graphene single crystal film for graphene electronic device, involves forming copper single crystal film on sapphire single crystal substrate, forming nickel film, subjecting to high temperature annealing.

PENG H, LIU Z, DENG B, TANG J