国家/地区 中国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 DENG L（3）
公开年 2015（2）
申请年 2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Graphene device structure contact electrode preparation method, involves structure section arranged on linear graphene edge, depositing metal covered with section structure, and one-dimensional graphene connected with metal electrode.

DENG L, HE L, JIANG M, LI L, XIE X, ZHANG D, XIE H, WANG H, CHEN L

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L

Graphene FET micro-zone heating method, involves regulating rear gate voltage to modulate edge micro-structure, and performing high-temperature narrow edge micro-structure heating process at temperature of about specific degrees centigrade.

WANG H, XIE X, WU T, XIE H, CHEN J, DENG L, LIU X, SUN Q, ZHANG X