国家/地区 中国（4） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（3） C23（2） C30（2）
IPC小类 C01B（3） C23C（2） C30B（2）
IPC C01B031/04（3） C23C016/26（2）
发明人 DI Z（4）
公开年 2012（4）
申请年 2012（4） 
专利权人 CHINESE ACAD.（3） SHANGHAI INS.（2）

Bandgap opening in graphene, comprises e.g. placing the graphene on silicon chip, introducing into ion implanter, bombarding the graphene on silicon sheet by using ion beam to produce defective product, and performing annealing treatment.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Graphene preparation includes depositing catalysis metal layer on substrate, implanting carbon ion in catalysis metal layer to form carbon atom saturated plane, and putting substrate in heating vacuum tube.

CHEN D, DI Z, DING G, WANG G, XIE X, ZHANG M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Growing graphene, comprises growing graphene on surface of catalyst using carbon source through chemical vapor deposition, or growing graphene on catalyst surface and interface of catalyst contacting with substrate.

DI Z, DING G, GONG Q, JIANG M, SUN L, WANG S, XIE X, ZHU Y