国家/地区 中国（5）
IPC部 C（4）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 DI Z（5）
公开年 2014（5）
申请年 2014（3）  2013（2） 
专利权人 SHANGHAI INS.（3）

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Preparing diphenyl ether compound comprises mixing halogenated benzene compound, phenolic compound, alkali and tetrahydrofuran, adding cuprous oxide, ultrasonically dispersing the mixture in the presence of a graphene catalyst and heating.

GUO X, DI Z

Promoting osteogenesis useful for preparing medicine for treating bone defects and osteoporosis, and exhibiting anti-cancer and anti-aging effect, involves using germanium-graphene.

XIE X, ZHANG M, LI J, YE L, LIU X, DI Z, CHEN D, DING G, GUO Q, WANG G

Graphene FET, has metal source electrode and metal drain electrode that are fixed on substrate surface, and top gate electrode arranged between bottom and upper surfaces of graphene channel layer, where channel layer is formed with gap.

WEI X, ZHENG L, DI Z, FANG Z

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z