国家/地区 美国（3） 中国（2）
IPC部 H（3） B（2）
IPC大类 H01（3） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC H01L029/06（2）
发明人 DIMITRAKOPOULOS C（3）
公开年 2013（2）
申请年 2012（3）
专利权人 INT BUSINESS.（3）

Interconnect structure for integrated microelectronic circuit, has graphene cap which is provided with edges that are vertically coincident with edges of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D, DIMITRAKOPOULOS C, HANNON J, NEUMAYER D, OTT J, DIMITRAKO P C D, GREER A

Semiconductor structure for semiconductor device, has substrate, graphene layer and double layer gate dielectric having alternate lamination of silicon nitride layer and hafnium oxide layer.

DIMITRAKOPOULOS C D, FARMER D B, GRILL A, LIN Y, NEUMAYER D A, PFEIFFER D, ZHU W, DIMITRAKOPOULOS C

Crystalline structure for silicon carbide layer, includes graphene layer that is located directly on crystallographic surface having non-hexagonal symmetry.

CHU J O, DIMITRAKOPOULOS C, FREITAG M O, GRILL A, MCARDLE T J, SUNG C, WISNIEFF R L