国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/02（2） H01L029/06（2） H01L029/16（2）
发明人 DIMITRAKOPOULOS C（3）
公开年 2015（3）
申请年 2014（3） 
专利权人 INT BUSINESS.（3）

Method for forming silicon-carbon alloy structure, involves removing horizontal portion of alloy structure, and converting set of contiguous exposed surface portions of silicon-carbon alloy fin into graphene layer by anneal process.

CHU J O, DIMITRAKOPOULOS C, HARLEY E C, HOLT J R, MCARDLE T J, STOKER M W

Tamper resistance identification method for preventing copycat products, involves forming unique identification code based on respective temperatures or voltages from graphene resistors during powered state.

DIMITRAKOPOULOS C, PFEIFFER D, PLOUCHART J, SMITH J T

Carbon nanotube semiconductor device, has graphene electrode formed on surface of substrate such that electrically insulating portion is interposed between bulk portion of substrate and graphene electrode.

AVOURIS P, DIMITRAKOPOULOS C, FARMER D B, STEINER M B, ENGEL M, KRUPKE R, LIN Y