国家/地区 美国（4）
IPC部 H（4） B（2） C（2）
IPC大类 H01（4） B82（2）
IPC小类 H01L（3） B82Y（2）
IPC
发明人 DU Z（4）
公开年
申请年
专利权人 UNIV SINGAPO.（2）

Manufacture of electrode for electrochemical devices, involves mixing active material particles, radiation curable resin precursors, and electrically conductive particles, electrostatically spraying, calendering, and applying radiation.

DANIEL C, WOOD D L, LI J, JANKE C J, DU Z

Non-blinking quantum dot used for forming quantum dot-based light-emitting diode, comprises core which is formed of cadmium selenide or cadmium zinc selenide, inner shell layer which is formed of zinc selenide, and outer shell layer which is formed of zinc sulfide or zinc oxide.

SHEN H, DU Z, LI L, WANG S, ZHANG Y

Making graphene used as an impenetrable gas barrier, comprises providing seed gas in presence of metallic substrate, providing pulsed, ultraviolet laser beam and moving substrate or laser beam relative to other.

CASTRO A H, OZYILMAZ B, STIER A V, TOH C T, DU Z, CASTRO N A H

Graphene-based memory cell for non-volatile memory, has graphene layer having controllable resistance states representing data values of the cell and ferroelectric layer controlling the resistance states.

NI G X, OEZYILMAZ B, TOH C T, ZHENG Y, NI G, TOH C, DU Z