国家/地区 美国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L029/06（2） H01L029/66（2） H01L029/78（2）
发明人 FARMER D B（3）
公开年 2014（3）
申请年 2013（3）
专利权人 INT BUSINESS.（3）

Carbon nanotube manufacturing method e.g. for nanotube-based transistor, involves aligning carbon nanotubes between graphene electrodes in direction parallel with electric field generated across graphene electrodes.

AVOURIS P, DIMITRAKOPOULOS C, FARMER D B, STEINER M B, ENGEL M, KRUPKE R, LIN Y

Semiconductor device has recess which is formed in substrate beneath graphene sheet via etchant passing through graphene sheet formed on substrate.

FARMER D B, FRANKLIN A D, SMITH J T

Graphene FET e.g. single-layer graphene FET, has graphene sheet coupled to top surface of gate layer and top surface of one of source and drain contacts, where gate layer is adapted to influence electric field of graphene sheet.

FARMER D B, FRANKLIN A D, OIDA S, SMITH J T