国家/地区 世界知识产权组织（5）
IPC部 H（5） B（3）
IPC大类 H01（5） B82（2）
IPC小类 B82Y（2） H01B（2） H01M（2）
IPC B82Y030/00（2） B82Y040/00（2） H01B001/04（2）
H01M004/36（2） H01M004/38（2） H01M004/62（2）
H01M010/0525（2）
发明人 GE C（5）
公开年 2021（3）
申请年 2017（2）  2021（2） 
专利权人 GUANGDONG KA.（2） HANGZHOU CAB.（2） NEWSOUTH INN.（2）

Three-dimensional carbon-silicon composite material comprises core-shell structure comprising nano silicon as core, and composite of carbon nanotubes, graphene and amorphous carbon as shell at preset thickness ratio.

GE C, YANG Y

High-capacity and high-stability silicon-carbon anode material comprises multiple spherical composite particles and organic cracked carbon layer coated on exterior of first composite particles, spherical particles include inner core layer.

GE C, YANG Y

High-threshold power semiconductor device has heavily doped semiconductor layer provided on surface of channel layer in cell region, on which source metal electrode is provided, terminal region in which channel layer is extended and wrapped.

SUN W, ZHANG C, XIN S, LI S, QIAN L, GE C, LIU S, SHI L

Electrical conductor for use in electrical cables and high power electrical transmission lines, has lamellar structure of graphene layers alternating with and compressed between substrate layers.

LI S S, GE C

Electrical multifilament conductor for power transmission line of power grids, has graphene core surrounded by sheath and comprising particulate graphene material compressed within sheath, where sheath is formed of metallic and polymer.

LI S S, GE C