国家/地区 中国（2）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 GENG D（2）
公开年 2011（2）
申请年 2010（2）
专利权人 CHINESE ACAD.（2）

Preparation of regular graphene by chemical gas phase deposition involves placing metal foil or substrate with metal catalyst in reactor without oxygen and water, raising temperature of metal foil or substrate, and adding carbon source.

WU B, HUANG L, GENG D

Manufacture of graphene involves adding iron catalyst into oxygen-free reactor, supplying gas carbon source into reactor and reacting.

LIU H, LIU Y, XUE Y, WU B, YU G, GUO Y, CHEN J, HUANG L, GENG D